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| KSG13003AR KSG13003AR SEMIHOW REV.A0,Mar 2009 KSG13003AR KSG13003AR Switch Mode series NPN silicon Power Transistor * High voltage, high speed power switching Absolute Maximum Ratings CHARACTERISTICS TC=25 unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TSTG TJ RATING 700 400 9 1.5 3 0.75 1.5 150 -65~150 UNIT V V V A A A W 1.5 Amperes NPN Silicon Power Transistor 1.5 Watts TO-92L 1. Emitter 2. Collector 3. Base Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25) Storage Temperature Max. Operating Junction Temperature Electrical Characteristics CHARACTERISTICS Collector-Base Breakdown Voltage TC=25 unless otherwise noted SYMBOL VCBO VCEO IEBO hFE1 hFE2 VCE(sat) Test Condition IC=500uA, IE=0 IC=5mA, IB=0 VEB=9V,IC=0 VCE=2V,IC=0.5A VCE=2V,IC=1A IC=0.5A,IB=0.1A IC=1A,IB=0.25A IC=1.5A,IB=0.5A IC=0.5A,IB=0.1A IC=1A,IB=0.25A VCB=10V, f=0.1MHz Min 700 400 Typ. Max Unit V V Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage 10 9 5 35 0.5 1.0 3.0 1.0 1.2 21 4 1.1 4.0 0.7 V V V V V *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time * Pulse Test: Pulse Width300s, Duty Cycle2% VBE(sat) Cob fT ton tstg tF VCE=10V,IC=0.1A Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125 Note. R hFE1 Classification O Y 9 ~ 16 15 ~ 25 20 ~ 30 Package Mark information. S AR 13003 YWW Z R YWW Z Pin type (ECB) Y; year code, WW; week code hFE1 Classification SEMIHOW REV.A0,Mar 2009 KSG13003AR Typical Characteristics SEMIHOW REV.A0,Mar 2009 KSG13003AR Package Dimensions TO-92L Dimensions in Millimeters SEMIHOW REV.A0,Mar 2009 |
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